|
|
Semiconductor Physics Laboratory (Fizica Semiconductorilor) Head: Nicolae Tomozeiu, Ph. D., senior scientist, R&D Oce Technologies, Venlo, The Netherlands; " Department of Non-Crystalline Semiconductors Head: Nicolae Tomozeiu, Ph. D., senior scientist, R&D Oce Technologies, Venlo, The Netherlands
Semiconductor Physics Laboratory (SPL) is aimed to perform theoretical and experimental study on functional semiconductors and dielectrics. Profiling and evaluating the physical phenomena that determine a specific characteristic of the material is our main goal. Our wide experience - over 25 years of successful work in deposition and characterization of semiconductors/dielectrics thin films - is used in material design with specific functionality, as requested by the customer. The core of our expertise includes: a. electrical conduction and dielectric relaxation; b. photoconduction and photo-voltaic effects in semiconductors; c. optical properties in UV-VIS range; d. spectro-ellipsometry characterization; e. structural properties via IR spectroscopy; f. investigation of residual mechanical stress in thin films; g. surface characterization (topography, adhesion, wettability); h. thin film depositions via PECVD and sputtering; i. optical emission spectroscopy characterization of plasmas utilized in depositions of semiconductors /dielectrics thin films. This can be extended to device characterization as required by the customer.
Main Research Directions:a) Electrical conduction and dielectric properties of non-crystalline semiconductors; b) Non-crystalline semiconductors as functional materials; c) Photoconduction in non-crystalline semiconductors and applications; d) Solar energy via non-crystalline semiconductors’ applications.
About us: Dr. Nicolae Tomozeiu is senior scientist with an extended expertise in solid state physics with a focus on electrical and opto-electronic characterization of material thin films. He is a former fellow of the universities of Cambridge, Rome and Utrecht. For a period of 10 years he was member of Solid State Physics Department of Physics Faculty, Bucharest University. Currently he is a scientific referee for the Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Journal of Physics: Condensed Matter, Journal of Optoelectronics and Advanced Materials. He has (co)-authored four scientific books and over 70 peer-reviewed articles. Some of his most recent publications include: 1) Proceedings E-MRS 2007, Guest-editors Nicolae Tomozeiu and Bernard Servet, Thin Solid Films, 516 (2008) 2) Electrical conduction and dielectric relaxation of a-SiOx (0<2) thin films deposited by reactive RF magnetron sputtering, N. Tomozeiu, Thin Solid Films, 516 (2008) 8199 3) Optical emission studies of the gas phase during the silicon suboxide deposition by reactive rf magnetron-sputtering, N. Tomozeiu, Thin Solid Films 515 (2007) 6582 4) Effects of UV photon irradiation on SiOx (0<2) structural properties, Nicolae Tomozeiu, Appl. Surf. Science 2053 (2006) 376-380 5) High-energy ion-beam-induced phase separation in SiOx films, W.M. Arnoldbik, N. Tomozeiu, E.D. van Hattum, R.W. Lof, A.M. Vredenberg, and F.H.P.M. Habraken, Phys. Rev. B 71, (2005) 125329 6) Role of spinodale decomposition in the structure of SiOx, J.J. Hapert, A.M. Vredenberg, E.E. van Faassen, N. Tomozeiu, W.M. Arnoldbik and F.H.P.M. Habraken, Phys. Rev. B69 (2004) 245202-1 - 8 7) Infrared transient grating and photon echo spectroscopy of oxygen vibrational modes in amorphous silicon thin films, J.P.R. Wells, P.J. Philips, N. Tomozeiu, F.H.P.M. Habraken and J.I. Dijkhuis, Phys. Rev. B 68 (2003) 115207
Department of Photoconduction and solar energy conversion Head: Prof. Stefan Antohe, Faculty of Physics, University of Bucharesty
Department of Semiconductor Applications Head:
Research Directions:
a) Electrical conduction and dielectric properties of non-crystalline semiconductors. b) Non-crystalline semiconductors as Functional materials; c) Photoconduction in non-crystalline semiconductors and applications; d) Solar energy via non-crystalline semiconductors’ applications.
Publications:
1) Proceedings E-MRS 2007, Guest-editor, Editorial by Bernard Servet and Nicolae Tomozeiu Thin Solid Films, 516 (2008)
2) The physiscs of amorphous semiconductors (II-nd part) N. Tomozeiu and I. Munteanu - Ed. Bucharest University, 1-186 (1999)
3) Introduction in integrated optoelectronics N. Tomozeiu - Ed. Bucharest University , 1-210 (1998)
4) The physics of amorphous semiconductors N. Tomozeiu and I Munteanu - Ed. Bucharest University , 1-207 (1996)
5) The physiscs of semiconductors in problems and exercises I. Munteanu, L.Ion and N. Tomozeiu - Ed. Bucharest University , 1-144 (1994)
1) Electrical conduction and dielectric relaxation of a-SiOx (0<2) thin films deposited by reactive RF magnetron sputtering, N. Tomozeiu, Thin Solid Films, 516 (2008) 8199
2) Structure, composition, morphology and electrical properties ofamorphous SiOx (0<2) thin films, N Tomozeiu and H.J.H. Rheiter, Thin Solid Films, 516 (2008) 8205
3) Optical emission studies of the gas phase during the silicon suboxide deposition by reactive rf magnetron-sputtering, N. Tomozeiu, Thin Solid Films 515 (2007) 6582
4) Nano-scale effects of swift heavy ion irradiation in SiOx layers and multilayers W.M. Arnoldbik, D.Knoesen, N. Tomozeiu and F.H.P.M. Habraken, Nuclear Instruments and Methods in Physics Research B 258 (2007) 199
5) SiOx structural modifications by ion bombardment and their influence on electrical properties A. Milella, M. Creatore, M.C.M. van de Sanden and N. Tomozeiu, J.of Optoelectronics and Advance Materials, vol 8 nr 6 (2006) 2003-2010
6) SiOx thin films deposition by r.f. magnetron reactive sputtering: structural properties designed by deposition conditions N. Tomozeiu, J.of Optoelectronics and Advance Materials, vol 8 nr 2 (2006) 769-775
7) Effects of UV photon irradiation on SiOx (0<2) structural properties, Nicolae Tomozeiu, Appl. Surf. Science 2053 (2006) 376-380
8) High-energy ion-beam-induced phase separation in SiOx films W.M. Arnoldbik, N. Tomozeiu, E.D. van Hattum, R.W. Lof, A.M. Vredenberg, and F.H.P.M. Habraken, Phys. Rev. B 71, (2005) 125329 * selected and published also in Virtual Journal of Nanoscale Science & Technology, 11 April 2005, section Surface and interface properties
9) Role of spinodale decomposition in the structure of SiOx J.J. Hapert, A.M. Vredenberg, E.E. van Faassen, N. Tomozeiu, W.M. Arnoldbik and F.H.P.M. Habraken, Phys. Rev. B69 (2004) 245202-1 - 8
10) Study of the a-Si/a-SiO2 interface deposited by r.f. magnetron sputtering N. Tomozeiu, E.E. van Faassen, A. Palmero, W.M. Arnoldbik, A.M. Vredenberg, F.H.P.M. Habraken Thin Solid Films, 447/448, (2004) 306-310
11) Desorption of O2 from SiO2 during irradiation of SiO2 with MeV/a.m.u. heavy ions W.M. Arnoldbik, N. Tomozeiu and F.H.P.M. Habraken, Nucl. Instrum. Methods Phys. Res. B vol. 219-220 (2004) 312-316
12) Modifications in Thin Films Structures by Swift Heavy Ions W.M. Arnoldbik, N. Tomozeiu and F.H.P.M. Habraken, Vacuum 73 (2004) 109-114
13) On the deposition process of silicon suboxides by RF magnetron reactive sputtering in Ar- O2 mixtures: theoretical and experimental approach A. Palmero, N. Tomozeiu, A.M. Vredenberg, W. Arnoldbik and F.H.P.M. Habraken in Surface and Coatings Technology, 177-178 (2004), 215-221.
14) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices M. Modreanu, M. Gartner, E. Aperathitis, N. Tomozeiu, M. Androulidaki, D. Cristea and Paul Hurley Physica E: Low-dimensional Systems and Nanostructures, Volume 16, Issues 3-4, 461-466 (2003)
15) Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour A.Shiryaev, A. van Veen, A. Rivera, M. van Huis, T. Bus, W.M. Arnoldbik, N. Tomozeiu, F.H.P.M. Habraken, R. Delamare and E. Ntsoenzok, Eur. Phys. J.: Applied Physics 23 (2003) 11-18
16) Electronic sputtering of thin SiO2 films by MeV heavy ions W.M. Arnoldbik, N. Tomozeiu, F.H.P.M. Habraken, Nucl. Instrum. Methods Phys. Res. B 203 (2003) 151-157
17) Infrared transient grating and photon echo spectroscopy of oxygen vibrational modes in amorphous silicon thin films J.P.R. Wells, P.J. Philips, N. Tomozeiu, F.H.P.M. Habraken and J.I. Dijkhuis, Phys. Rev. B 68 (2003) 115207
18) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices M. Modreanu, M. Gartner, E. Aperathitis, N. Tomozeiu, M. Androulidaki, D. Cristea and Paul Hurley, Physica E. Vol 16, 3-4 (2003) 461-466
19) Structural transition in silicon suboxides at critical oxygen content N. Tomozeiu, E.E. van Faassen and F.H.P.M. Habraken, Annals of West University of Timisoara, Series chemistry, 12 (3) (2003) 1039-1046 20) Structure of sputtered silicon suboxide single- and multi-layers N. Tomozeiu, E.E. van Faassen, W.M. Arnoldbik, A.M. Vredenberg, F.H.P.M. Habraken Thin Solid Films, 420/421C, 382-385 (2002) 21) On the sputtering deposition process of silicon suboxide thin films N.Tomozeiu, J.of Optoelectronics and Advance Materials, vol 4 nr 4, 959-964, (2002)
22) Structural properties of a-SiOx layers deposited by reactive sputtering technique N. Tomozeiu, J. J. van Hapert, E. E. van Faassen, W. Arnoldbik, A. M. Vredenberg and F. H. P. M. Habraken, J.of Optoelectronics and Advance Materials, vol 4 nr 3, 513-522, (2002)
23) Ion beam induced desorption
from thin films: SiO2 single layers and SiO2/Si multilayers
24) Selectve interaction by ion beams to multilayers of amorphous silicon and silicon oxide D. Knoesen, N. Tomozeiu, W.M. Arnoldbik and F.H.P.M. Habraken, Procc. of the 15-th Int. Congres. on Electron Microscopy , Durban, South-Africa (2002)
25) Analyses of a-SiO2/a-Si
multilayer structures by ion beam methods and electron spin resonance 26) Microstructural and optical
properties of as-deposited LPCVD silicon films 27) Investigation on the optical
and microstructural properties of photoluminiscent LPCVD SiOxNy
thin films 28) Compositional and structural
properties of sputtered a-SiOx layers
29) Charge transport
through localized states in sputtered amorphous silicon suboxide 30) Optical and electrical properties
of as-deposited LPCVD SiOx Ny thin films
31) SiC formation on Si(100) via
C60 precursors 32) Electrical Properties of LPCVD
Polysilicon Deposited in the Vicinity of Amorphous – Polycrystaline Phase
33) On the Photoluminescence of the a-C:H Films N. Tomozeiu, J. Seekamp, A. Ferrari and J. Niemann - J. Optoelectronics and Advanced Materials, 2(3), 241-246 (2000)
34) Electrical and Photovoltaic
Properties of Photosintetized ITO/a-Si:H p-i-n/TPyP/Au Cells
35) Optical studies of a-C:H film
deposition from CH4, CH4/He, CH4/Ar and CH4/N2 rf plasmas
36) Electrical properties of LPCVD
polyasilicon deposited in the vicinity of amorphous- polycrystalline phase
37) Optical properties of LPCVD
silicon oxynitride
38) Magnetic Multipole Confinement
Used in Amorphous Hydrogenated Carbon Films Deposition
39) Optical and electrical properties
of a-C:H deposited by magnetic confinement of r.f. PECVD plasma
40) Amorphous Phase Influence
on the Optical Bandgap of Polysilicon
41) Optical properties of porous
silicon thin films
42) Photoemission Study of SiC Films grown by C60 Precursors N. Tomozeiu, M. DeSeta and F. Evangelisti, J. Optoelectronics and Advanced Materials, 1(3) 37-42, (1999) 43) Material properties and tribological
performance of rf-PECVD deposited DLC coatings 44) Physical-optical Properties
of LPCVD Amorphous Silicon Rich- Nitride and Oxynitride
45) The Dark Conductivity of the
Polysilicon Layers 46) Electrical Properties of Sandwich
Structures with Aluminium Nitride Layers
47) A Field-Effect Transistor
with Copper Phtalocyanine Thin Film
48) On the Average-gap Model in
Amorphous Materials 49) Optical properties of a-Si3
N4 and a-SiOx Ny
50) Annealing effects on electrical
and photoelectrical properties of polysilicon films
51) On the optical properties
of a-SiOx Ny 52) Electrical and Photoelectrical
Properties of a Three-Layered organic Solar Cell with an Enlarged Photoactive Region
of Codeposited Dyes
53) Steady-state Photoconductivity in a-Se0.6Te0.4 N.Tomozeiu, I. Munteanu and R. Ilie, Romanian Reports in Physics, vol 48, nr 5-6, 481-486, (1996)
54) Field Effect Transistors Based
on Cooper Phtalocyanine 55) Electrical and Optical Properties
of a-C:H Layers 56) Photoconductivity and Optical
Properties of a-Si1-x Cx :H Alloys 57) Unhydrogenated DLC Films Obtained
by Magnetron Sputtering 58) Electrical conduction in doped
polymers
59) Photoconduction study of a-Se60
Te40 60) The Influence of Magnetic
Field on a-Si:H Photoconductivity
61) On the Photoconductivity
Study in a-SiC:H Alloys
62) Optical modulation spectroscopy
of a-SiC:H alloys
63) Frequency Dependence of Conductivity on a-C:H Thin Films N. Tomozeiu and T. Stoica, CAS '94, Proceedings, Vol. 17, 392-396, (1994) 64) On the Switching and Memory
Phenomena in Amorphous InSe Thin Films
65) Optical Properties of Amorphous
Carbon
66) Theory of Carrier Transport
Mechanism through Organic-on-Inorganic Semiconductor Diodes 67) On the Magnetic Field Dependence
of Hydrogenated Amorphous Silicon Photoconductivity
68) On the Photoconductivity in Hydrogenated Amorphous Silicon I.Licea and N. Tomozeiu Phys. Stat. Sol. (b) 179, 513-520, (1993) 69) The a.c. Admittance Characteristics
of Organic -on- Inorganic Contact Barriers
70) Properties of the Organic-on-Inorganic Semiconductor Barrier Contact Diodes In/PTCDI/p-Si and Ag/CuPc/p-Si S. Antohe, N. Tomozeiu and S. Gogonea, Phys. Stat. Sol. (a) 125, 397-407 (1991)
|
|
